Ion Fluence Damage on the Lattice Structure of Silicon Wafers Using Gold Ions

Authors: Naomy Nolasco, Sharon Pepenella

SUNY Campus: Suffolk County Community College

Presentation Type: Poster

Location: Old Union Hall

Presentation #: 46

Timeslot: Session B 10:15-11:15 AM

Abstract: The exposure of semiconductor materials to space radiation from cosmic rays can significantly impact their structural integrity and performance. Cosmic rays or heavy ion impacts can cause single-event upsets (SEU) which causes a disruption in electronics and temporary errors in memory or operations. This study investigates the structural impact of gold ion irradiation with a higher fluence on pre-polished silicon wafers to imitate long-term space radiation exposure. Gold was selected due to it being a heavy ion relative to other metals causing significant damage to the lattice structure. Using Tandem Van de Graaff electrostatic accelerator, silicon wafers were irradiated with a high ion fluence compared to other groups in WDTS Brookhaven User Facility Summer School at Brookhaven National Laboratory to assess the possible difference in damage. The Stopping and Range Ions in Matter (SRIM) software was used to simulate ion penetration depths, ensuring precise experimental parameters. The samples were viewed, cut, and welded using the Helios G5 Dual Beam SEM/FIB Microscope at the Center for Functional Nanomaterials (CFN). The National Synchrotron Light Source II (NSLS-II) provided Full Field X-ray imaging (FXI), allowing a 3D tomography to visualize subsurface lattice disruptions. Analysis done at another laboratory confirmed that gold ion irradiation can induce measurable damage. This research provides insights into the damage of silicone in semiconductors under space radiation and heavy ion impacts. The findings have broad implications for improving the resilience of semiconductor-based technology in harsh environments, including satellites, spacecrafts, and space instruments.